A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor（UMOSFET） integrated with a Schottky rectifier is proposed.In this device,a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET.Specific on-resistances of 7.7 m.m...

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Published inChinese physics B Vol. 21; no. 5; pp. 441 - 444
Main Author 黄庆 刘鹏 刘涛 郭沙沙 王雪林 王颖 焦文利 胡海帆 刘云涛 曹菲
Format Journal Article
LanguageEnglish
Published 01.05.2012
Subjects
Breakdown
Computer simulation
Electric potential
Gates
Leakage current
MOSFET
MOSFETs
Rectifiers
Reduction
Voltage
偏置电压
反向恢复时间
电源
肖特基整流器
金属氧化物半导体
集成
Online AccessGet full text
ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/5/056104

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Abstract An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor（UMOSFET） integrated with a Schottky rectifier is proposed.In this device,a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET.Specific on-resistances of 7.7 m.mm 2 and 6.5 m.mm 2 for the gate bias voltages of 5 V and 10 V are achieved,respectively,and the breakdown voltage is 61 V.The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET.
AbstractList An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor（UMOSFET） integrated with a Schottky rectifier is proposed.In this device,a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET.Specific on-resistances of 7.7 m.mm 2 and 6.5 m.mm 2 for the gate bias voltages of 5 V and 10 V are achieved,respectively,and the breakdown voltage is 61 V.The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET.
An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor (UMOSFET) integrated with a Schottky rectifier is proposed. In this device, a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET. Specific on-resistances of 7.7 m[Omega] times mm super(2) and 6.5 m[Omega] times mm super(2) for the gate bias voltages of 5 V and 10 V are achieved, respectively, and the breakdown voltage is 61 V. The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET.
Author 黄庆 刘鹏 刘涛 郭沙沙 王雪林 王颖 焦文利 胡海帆 刘云涛 曹菲
AuthorAffiliation College of Information and Communication Engineering, Harbin Engineering University,. Harbin 150001, China
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10.1109/TED.2003.813226
10.1088/1674-1056/20/10/107101
10.1109/LED.2010.2040576
10.1109/55.192780
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Notes accumulation; Schottky source; reverse recovery time; leakage current
An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor（UMOSFET） integrated with a Schottky rectifier is proposed.In this device,a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET.Specific on-resistances of 7.7 m.mm 2 and 6.5 m.mm 2 for the gate bias voltages of 5 V and 10 V are achieved,respectively,and the breakdown voltage is 61 V.The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET.
Wang Ying,Jiao Wen-Li,Hu Hai-Fan,Liu Yun-Tao,and Cao Fei College of Information and Communication Engineering,Harbin Engineering University,Harbin 150001,China
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Snippet An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor（UMOSFET） integrated with a Schottky rectifier is proposed.In...
An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor (UMOSFET) integrated with a Schottky rectifier is proposed. In...
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StartPage 441
SubjectTerms Breakdown
Computer simulation
Electric potential
Gates
Leakage current
MOSFET
MOSFETs
Rectifiers
Reduction
Voltage
偏置电压
反向恢复时间
电源
肖特基整流器
金属氧化物半导体
集成
Title A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier
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