A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier

An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor（UMOSFET） integrated with a Schottky rectifier is proposed.In this device,a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET.Specific on-resistances of 7.7 m.m...

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Published inChinese physics B Vol. 21; no. 5; pp. 441 - 444
Main Author 黄庆 刘鹏 刘涛 郭沙沙 王雪林 王颖 焦文利 胡海帆 刘云涛 曹菲
Format Journal Article
LanguageEnglish
Published 01.05.2012
Subjects
Breakdown
Computer simulation
Electric potential
Gates
Leakage current
MOSFET
MOSFETs
Rectifiers
Reduction
Voltage
偏置电压
反向恢复时间
电源
肖特基整流器
金属氧化物半导体
集成
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ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/21/5/056104

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Summary:An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor（UMOSFET） integrated with a Schottky rectifier is proposed.In this device,a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET.Specific on-resistances of 7.7 m.mm 2 and 6.5 m.mm 2 for the gate bias voltages of 5 V and 10 V are achieved,respectively,and the breakdown voltage is 61 V.The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET.
Bibliography:accumulation; Schottky source; reverse recovery time; leakage current
An accumulation gate enhanced power U-shaped metal-oxide-semiconductor field-effect-transistor（UMOSFET） integrated with a Schottky rectifier is proposed.In this device,a Schottky rectifier is integrated into each cell of the accumulation gate enhanced power UMOSFET.Specific on-resistances of 7.7 m.mm 2 and 6.5 m.mm 2 for the gate bias voltages of 5 V and 10 V are achieved,respectively,and the breakdown voltage is 61 V.The numerical simulation shows a 25% reduction in the reverse recovery time and about three orders of magnitude reduction in the leakage current as compared with the accumulation gate enhanced power UMOSFET.
Wang Ying,Jiao Wen-Li,Hu Hai-Fan,Liu Yun-Tao,and Cao Fei College of Information and Communication Engineering,Harbin Engineering University,Harbin 150001,China
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/21/5/056104