曹菲, 黄. 刘. 刘. 郭. 王. 王. 焦. 胡. 刘. (2012). A gate enhanced power U-shaped MOSFET integrated with a Schottky rectifier. Chinese physics B, 21(5), 441-444. https://doi.org/10.1088/1674-1056/21/5/056104
Chicago Style (17th ed.) Citation曹菲, 黄庆 刘鹏 刘涛 郭沙沙 王雪林 王颖 焦文利 胡海帆 刘云涛. "A Gate Enhanced Power U-shaped MOSFET Integrated with a Schottky Rectifier." Chinese Physics B 21, no. 5 (2012): 441-444. https://doi.org/10.1088/1674-1056/21/5/056104.
MLA (9th ed.) Citation曹菲, 黄庆 刘鹏 刘涛 郭沙沙 王雪林 王颖 焦文利 胡海帆 刘云涛. "A Gate Enhanced Power U-shaped MOSFET Integrated with a Schottky Rectifier." Chinese Physics B, vol. 21, no. 5, 2012, pp. 441-444, https://doi.org/10.1088/1674-1056/21/5/056104.
Warning: These citations may not always be 100% accurate.