Analyzing total optical absorption coefficient of impurity doped quantum dots in presence of noise with special emphasis on electric field, magnetic field and confinement potential

• Published in: Chemical physics Vol. 463; pp. 149 - 158
• Main Authors: Mandal, Arkajit, Sarkar, Sucharita, Ghosh, Arghya Pratim, Ghosh, Manas
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 16.12.2015
• Subjects: Gaussian white noise; Impurity; Noise strength; Quantum dot; Total optical absorption coefficient; Gaussian white noise; Quantum dot; Total optical absorption coefficient; Impurity; Noise strength
• ISSN: 0301-0104
• DOI: 10.1016/j.chemphys.2015.10.014

[Display omitted] •Total optical absorption coefficient (TOAC) of impurity doped quantum dot is studied.•The dot is subject to Gaussian white noise.•TOAC is affected by various important parameters.•Noise influences TOAC profiles noticeably.•Findings may have technological importance. We make an extensive investigation of total optical absorption coefficient (TOAC) of impurity doped quantum dots (QDs) in presence and absence of Gaussian white noise. The TOAC profiles have been monitored against incident photon energy with special emphasis on the roles played by the electric field, magnetic field, and the dot confinement potential. Presence of impurity also influences the TOAC profile. In general, presence of noise causes enhancement of TOAC over that of noise-free condition. However, the interplay between the noise and the quantities like electric field, magnetic field, confinement potential and impurity potential bring about rich subtleties in the TOAC profiles. The said subtleties are often manifested by the alterations in TOAC peak intensity, extent of TOAC peak bleaching, and value of saturation intensity. The findings reveal some technologically relevant aspects of TOAC for the doped QD systems, specially in presence of noise.