Transition Metal‐Oxide Nanomembranes Assembly by Direct Heteroepitaxial Growth

The integration of complex oxides with a wide range of functionalities on conventional semiconductor platforms is highly demanded for functional applications. Despite continuous efforts to integrate complex oxides on Si, it is still challenging to harvest epitaxial layers using standard deposition p...

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Bibliographic Details
Published inAdvanced functional materials Vol. 34; no. 26
Main Authors Li, Hang, Yun, Shinhee, Chikina, Alla, Rosendal, Victor, Tran, Thomas, Brand, Eric, Christoffersen, Christina H., Plumb, Nicholas C., Shi, Ming, Pryds, Nini, Radovic, Milan
Format Journal Article
LanguageEnglish
Published Hoboken Wiley Subscription Services, Inc 01.06.2024
Subjects
ARPES
Epitaxial layers
heteroepitaxial growth
Heterostructures
Membranes
Photoelectric emission
Physical properties
Silicon
Titanium dioxide
Transition metals
transition metal‐oxide membrane
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Summary:The integration of complex oxides with a wide range of functionalities on conventional semiconductor platforms is highly demanded for functional applications. Despite continuous efforts to integrate complex oxides on Si, it is still challenging to harvest epitaxial layers using standard deposition processes. Here, a novel method is demonstrated to create high‐quality complex heterostructures on Si integrated with SrTiO3 membranes as a universal platform. The STO membrane successfully bridges a broad spectrum of complex heterostructures such as SrNbO3, SrVO3, TiO2, and dichalcogenide 2D superconducting FeSe toward semiconducting wafers (Si). Through electronic structures measured by angle‐resolved photoemission spectroscopy, the high quality and functionality of the heterostructures are verified. This study demonstrated a new pathway toward realizing electronic devices with multifunctional physical properties incorporated into Si. An innovative methodology is developed to craft high‐quality complex heterostructures on Si, seamlessly integrated with SrTiO3 membranes. A diverse array of complex heterostructures has been successfully fabricated, and their superior quality and enhanced functionality have been rigorously validated through comprehensive angle‐resolved photoemission spectroscopy. This groundbreaking approach paves the way for the advancement of electronic devices and presents exciting prospects for the straightforward integration of multifunctional quantum physical properties into Si‐based platforms.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.202313236