Ultratrace analysis of semiconductor films by vapor phase decomposition/graphite furnace AAS
A sensitive and accurate determination method for detecting metallic impurities in semiconductor films such as SiO2 and Si3N4 has been investigated by using vapor phase decomposition and graphite furnace AAS. The decomposition apparatus is constructed with a sealed container, a storage container for...
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| Published in | BUNSEKI KAGAKU Vol. 37; no. 11; pp. T215 - T217 |
|---|---|
| Main Authors | , |
| Format | Journal Article |
| Language | English Japanese |
| Published |
Tokyo
The Japan Society for Analytical Chemistry
1988
Japan Science and Technology Agency |
| Subjects | |
| Online Access | Get full text |
| ISSN | 0525-1931 |
| DOI | 10.2116/bunsekikagaku.37.11_T215 |
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| Abstract | A sensitive and accurate determination method for detecting metallic impurities in semiconductor films such as SiO2 and Si3N4 has been investigated by using vapor phase decomposition and graphite furnace AAS. The decomposition apparatus is constructed with a sealed container, a storage container for generating hydrofluoric acid vapor, a film supporter such as a wafer carrier, and a resolved solution receptacle. The semiconductor films are resolved completely by hydrofluoric acid vapor. Each resolved solution is collected with a micropipette, and finally impurity concentrations are measured by graphite furnace AAS. This method was found to be highly effective for preventing contamination from the reagent and the surroundings. The detection limits were Na : 0.2 pg/cm2, K, Fe : 0.1 pg/cm2, and Cr : 0.05 pg/cm2. |
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| AbstractList | A sensitive and accurate determination method for detecting metallic impurities in semiconductor films such as SiO2 and Si3N4 has been investigated by using vapor phase decomposition and graphite furnace AAS. The decomposition apparatus is constructed with a sealed container, a storage container for generating hydrofluoric acid vapor, a film supporter such as a wafer carrier, and a resolved solution receptacle. The semiconductor films are resolved completely by hydrofluoric acid vapor. Each resolved solution is collected with a micropipette, and finally impurity concentrations are measured by graphite furnace AAS. This method was found to be highly effective for preventing contamination from the reagent and the surroundings. The detection limits were Na : 0.2 pg/cm2, K, Fe : 0.1 pg/cm2, and Cr : 0.05 pg/cm2. |
| Author | HIRATE, Naoyuki MATSUNAGA, Hideki |
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| Copyright | The Japan Society for Analytical Chemistry Copyright Japan Science and Technology Agency 1988 |
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| Discipline | Chemistry |
| EndPage | T217 |
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| References | 2) P. F. Schmidt, C. W. Peace : J. Electrochem. Soc., 128,630 (1981 3) J. W. Mitchell, D. L. Nash : Anal. Chem., 46,326 (1974). 1) R. B. Fair, J. C. C. Tsai : J. Electrochem. Soc., 125, 2050 (1978 |
| References_xml | – reference: 2) P. F. Schmidt, C. W. Peace : J. Electrochem. Soc., 128,630 (1981) – reference: 3) J. W. Mitchell, D. L. Nash : Anal. Chem., 46,326 (1974). – reference: 1) R. B. Fair, J. C. C. Tsai : J. Electrochem. Soc., 125, 2050 (1978) |
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| StartPage | T215 |
| SubjectTerms | decontamination electrothermal AAS semiconductor film ultratrace analysis vapor phase decomposition |
| Title | Ultratrace analysis of semiconductor films by vapor phase decomposition/graphite furnace AAS |
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