Ultratrace analysis of semiconductor films by vapor phase decomposition/graphite furnace AAS

A sensitive and accurate determination method for detecting metallic impurities in semiconductor films such as SiO2 and Si3N4 has been investigated by using vapor phase decomposition and graphite furnace AAS. The decomposition apparatus is constructed with a sealed container, a storage container for...

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Bibliographic Details
Published inBUNSEKI KAGAKU Vol. 37; no. 11; pp. T215 - T217
Main Authors HIRATE, Naoyuki, MATSUNAGA, Hideki
Format Journal Article
LanguageEnglish
Japanese
Published Tokyo The Japan Society for Analytical Chemistry 1988
Japan Science and Technology Agency
Subjects
decontamination
electrothermal AAS
semiconductor film
ultratrace analysis
vapor phase decomposition
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ISSN0525-1931
DOI10.2116/bunsekikagaku.37.11_T215

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Summary:A sensitive and accurate determination method for detecting metallic impurities in semiconductor films such as SiO2 and Si3N4 has been investigated by using vapor phase decomposition and graphite furnace AAS. The decomposition apparatus is constructed with a sealed container, a storage container for generating hydrofluoric acid vapor, a film supporter such as a wafer carrier, and a resolved solution receptacle. The semiconductor films are resolved completely by hydrofluoric acid vapor. Each resolved solution is collected with a micropipette, and finally impurity concentrations are measured by graphite furnace AAS. This method was found to be highly effective for preventing contamination from the reagent and the surroundings. The detection limits were Na : 0.2 pg/cm2, K, Fe : 0.1 pg/cm2, and Cr : 0.05 pg/cm2.
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ISSN:0525-1931
DOI:10.2116/bunsekikagaku.37.11_T215