Effective mass from microwave photoresistance measurements in GaAs/AlGaAs quantum wells

We have performed microwave photoresistance measurements in high mobility GaAs/AlGaAs quantum wells and investigated the value of the effective mass. The effective mass, obtained from the period of microwave-induced resistance oscillations (MIRO), was found to be about 12 % lower than the band mass...

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Published inJournal of physics. Conference series Vol. 456; no. 1; pp. 12040 - 5
Main Authors Hatke, A T, Zudov, M A, Watson, J D, Manfra, M J, Pfeiffer, L N, West, K W
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.01.2013
Subjects
Aluminum gallium arsenides
Dispersion
Dispersions
Gallium arsenide
Gallium arsenides
Microwaves
Oscillations
Physics
Quantum wells
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Summary:We have performed microwave photoresistance measurements in high mobility GaAs/AlGaAs quantum wells and investigated the value of the effective mass. The effective mass, obtained from the period of microwave-induced resistance oscillations (MIRO), was found to be about 12 % lower than the band mass in GaAs, m*b. In contrast, the measured magneto-plasmon dispersion (MPR) revealed an effective mass which is close to m*b, in accord with previous studies. These findings suggest that, in contrast to MPR, the MIRO dispersion contains corrections due to electron-electron interaction effects.
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ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/456/1/012040