Solution processed boron doped ZnO thin films: influence of different boron complexes

• Published in: Materials research express Vol. 6; no. 3; pp. 35903 - 35914
• Main Authors: Tumbul, Ahmet, Aslan, Ferhat, Demirozu, Songul, Goktas, Abdullah, Kilic, Ahmet, Durgun, Mustafa, Zarbali, Maharram Z
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.03.2019
• Subjects: BPh; BZO; phenyl boron complex (L; sol-gel; ZnO
• ISSN: 2053-1591; 2053-1591
• DOI: 10.1088/2053-1591/aaf4d8

ZnO is one of the most investigated semiconductor material in optoelectronic applications. Its eco-friendly, abundance and superior physical properties, makes it quite remarkable for researchers. In this study, we have shown that a new type of salen-phenyl boron complex (L2BPh2) can strongly affect the physical properties of the ZnO nanostructured samples. To prepare the doped and undoped ZnO thin film samples on glass substrates a popular solution and non-vacuum based sol-gel method was used. By adding of critical 0.5% molar ratio of new type salen-phenyl boron complex (L2BPh2) in ZnO solution, ZnO nanorod arrays were formed on the surface of the films. A decrease in the visible region of optical transmittance was also observed due to the formation of nanorods. Further increasing of doping ratio causes disappearing of nanorods. Resistivity values are found to decrease from 11 cm to ∼10−3 cm for undoped and 0.5% boron doped samples.