Radiation properties of dislocations created by plastic deformation of Si under high pressure and low temperature

Dislocation structures produced at room temperature under confining pressure (5 GPa) have been investigated by transmission electron microscopy and photoluminescence. Following annealing treatments in the temperature range 300°C – 600°C the initial DRL spectrum changes to a well-known spectrum of di...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 281; no. 1; pp. 012020 - 5
Main Authors Tereshchenko, A N, Steinman, E A, Rabier, J
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.02.2011
Subjects
Annealing
Data analysis
Dislocations
Electron microscopy
Electrons
Glide
Low temperature
Luminescence
Nucleation
Photoluminescence
Physics
Plastic deformation
Room temperature
Transformations
Transmission electron microscopy
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Summary:Dislocation structures produced at room temperature under confining pressure (5 GPa) have been investigated by transmission electron microscopy and photoluminescence. Following annealing treatments in the temperature range 300°C – 600°C the initial DRL spectrum changes to a well-known spectrum of dislocation luminescence of dissociated glide set dislocations. In spite of the fact that no transformation of perfect shuffle dislocations to dissociated glide ones was observed by transmission electron microscopy, experimental photoluminescence data analysis does not exclude the possibility either of such transformation or nucleation of glide dislocations following annealing treatments at temperature as low as 300°C.
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ISSN:1742-6596
1742-6588
1742-6596
DOI:10.1088/1742-6596/281/1/012020