U-shaped Reconfigurable Field-effect Transistor

• Published in: Journal of semiconductor technology and science Vol. 19; no. 1; pp. 63 - 68
• Main Authors: Wee, Daehoon, Kwon, Hui Tae, Lee, Won Joo, Choi, Hyun-Seok, Park, Yu Jeong, Kim, Boram, Kim, Yoon
• Format: Journal Article
• Language: English
• Published: 대한전자공학회 01.02.2019
• Subjects: 전기공학; reconfigurable filedeffect transistor(RFET); vertically stacked gates; 3-D MOSFET
• ISSN: 1598-1657; 2233-4866
• DOI: 10.5573/JSTS.2019.19.1.063

We propose a novel reconfigurable field-effect transistor (RFET) featuring two vertically-stacked gates and a U-shaped nanowire channel. Conventional RFETs have a relatively large unit cell size due to their configuration with multiple gates. However, the proposed device can solve this inherent disadvantage of RFET. In addition, it can have a long enough channel without additional area, so that excellent characteristics can be obtained without the short channel effects. The characteristics of the proposed device were examined by 3-D technology computer-aided design (TCAD) device simulation. The effect of some device parameters on the device performance were investigated. Also, the fabrication method is proposed. KCI Citation Count: 0