In situ variations of proton-induced luminescence in ZnSe crystals

Tellurium-doped ZnSe scintillating crystals have been studied by synchronous measurements of the evolution of the microwave-probed photoconductivity and the proton-induced luminescence under exposure to a 1.6 MeV proton beam. The defect introduction rate has been evaluated by the comparative analysi...

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Bibliographic Details
Published inJournal of physics. D, Applied physics Vol. 47; no. 26; pp. 1 - 7
Main Authors Gaubas, E, Ceponis, T, Jasiunas, A, Pavlov, J, Tekorius, A, Shevchenko, D, Katrunov, K, Kovalevskij, V, Remeikis, V, Galkin, S, Tamulaitis, G
Format Journal Article
LanguageEnglish
Published IOP Publishing 02.07.2014
Subjects
Crystal defects
Crystals
Evolution
Lasers
Luminescence
Proton beams
radiation defects
Synchronous
Zinc selenides
ZnSe scintillators
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Summary:Tellurium-doped ZnSe scintillating crystals have been studied by synchronous measurements of the evolution of the microwave-probed photoconductivity and the proton-induced luminescence under exposure to a 1.6 MeV proton beam. The defect introduction rate has been evaluated by the comparative analysis of the laser and proton beam induced luminescence. The difference of the carrier pair generation mechanisms inherent for light and for a proton beam has been revealed.
Bibliography:JPhysD-101779.R1
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ISSN:0022-3727
1361-6463
DOI:10.1088/0022-3727/47/26/265102