L-shaped electrode design for high-density spin–orbit torque magnetic random access memory with perpendicular shape anisotropy

• Published in: Journal of physics. D, Applied physics Vol. 54; no. 28; pp. 285002 - 285009
• Main Authors: Chi, Kequn, Shi, Yinuo, Li, Zhou, Zhang, Wenbiao, Xing, Yun, Feng, Xiang, Ma, Yungui, Meng, Hao, Liu, Bo
• Format: Journal Article
• Language: English
• Published: IOP Publishing 15.07.2021
• Subjects: magnetic random access memory; spin Hall angle; spintronics; spin–orbit torque
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/1361-6463/abf61d

Abstract Magnetic tunneling junctions with strong perpendicular shape anisotropy attract attention due to their high-density magnetic random access memory. As thermal stability increases, the power consumption also increases. To solve this problem, devices are made to be driven by spin–orbit torque (SOT) instead of spin-transfer torque. However, the assisting field needed for deterministic switching is a major obstacle for SOT devices. In this work, we demonstrate an L-shaped electrode structure attached to the magnetic recording layer to induce a composite SOT, achieving high-speed and field-free magnetization switching. Meanwhile, a comparative study between L-shaped and sidewall electrode structure demonstrates that the L-shaped structure leads to fast and low-power switching. Finally, the switching characteristic at various current densities and spin Hall angles is studied and it turns out that to achieve high-speed reversal, the current density and the spin Hall angle need to be optimized, which might be attributed to strong in-plane effective field component disturbance. The novel L-shaped structure is feasible for high-speed, low-power and deterministic switching and has great potential in spintronic applications.