Oriented single phase PbZrO3 thin films on Si(100) substrate using aqueous sol with rapid thermal annealing

• Published in: Materials letters Vol. 33; no. 1-2; pp. 1 - 5
• Main Authors: PALKAR, V. R, CHATTOPADHYAY, S, PURANDARE, S. C, LOKHRE, S. G, PINTO, R, MULTANI, M. S
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 01.11.1997
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Thin films; Atomic force microscopy; Rapid thermal annealing; Inorganic compounds; Ferroelectric materials; Crystal orientation; Aqueous solutions; Ternary compounds; Crystal growth from solutions; Spin-on coating; Experimental study; Lead zirconates
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/S0167-577X(97)00071-2

Thin films of PbZrO3 were fabricated on Si(100) substrate by spin coating the aqueous sol of lead and zirconium hydroxy complex. Phase formation is achieved by conventional furnace annealing and rapid thermal annealing. Deposition conditions are optimised to realise continuous, phase pure, oriented films. The initial concentration of precursor solution, rate of spin coating and post annealing conditions play an important role in determining the quality of the films. PbZrO3, which is known to be antiferroelectric in the bulk state at room temperature, exhibits ferroelectric properties when the film thickness is reduced to about 0.08 micron. This behaviour may be attributed to defects and surface charge induced fields. 10 refs.