Design of Radiation-Tolerant High-Speed Signal Processing Circuit for Detecting Prompt Gamma Rays by Nuclear Explosion

Electronic equipment in nuclear power plants and nuclear warfare is damaged by transient effects that cause high-energy pulsed radiation. There is a concern that this type of damage can even cause enormous economic losses and human casualties by paralyzing control systems. To solve this problem, thi...

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Bibliographic Details
Published inElectronics (Basel) Vol. 11; no. 18; p. 2970
Main Authors Lee, Minwoong, Lee, Namho, Gwon, Huijeong, Kim, Jongyeol, Hwang, Younggwan, Cho, Seongik
Format Journal Article
LanguageEnglish
Published Basel MDPI AG 01.09.2022
Subjects
Burnout
Casualties
Circuit design
Circuits
CMOS
Design
Design and construction
Economic impact
Electronic equipment
Explosions
Feedback
Field effect transistors
Gamma rays
Identification and classification
Metal oxide semiconductor field effect transistors
MOSFETs
Nuclear explosions
Nuclear power plants
Nuclear warfare
Power consumption
Power supply
Pulsed radiation
Radiation
Radiation damage
Radiation tests
Radiation tolerance
Semiconductor devices
Sensors
Signal processing
Silicon
Switching
Switching circuits
Testing
Transistors
South Korea
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Summary:Electronic equipment in nuclear power plants and nuclear warfare is damaged by transient effects that cause high-energy pulsed radiation. There is a concern that this type of damage can even cause enormous economic losses and human casualties by paralyzing control systems. To solve this problem, this study proposes a complementary metal-oxide semiconductor (CMOS) logic-based, switching detection circuit that can detect pulsed radiations at a fast rate. This circuit improved response speed and power consumption by using the switching operation of digital logic compared with conventional circuits. Furthermore, radiation tolerance to total ionizing dose (TID) effects was achieved even in a cumulative radiation environment because of the use of the design using p-metal-oxide semiconductor field effect transistor (p-MOSFET). The proposed detection circuit was manufactured by a 0.18 µm CMOS bulk process for integration. Normal operation in the detection range of 2.0 × 107 rad(si)/s was verified by pulsed radiation test evaluations, and the tolerance properties to a radiation of 2 Mrad was verified based on cumulative radiation test evaluations.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics11182970