Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation

Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum ann...

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Bibliographic Details
Published inJournal of physics. Conference series Vol. 552; no. 1; pp. 12003 - 5
Main Authors Kabyshev, A V, Konusov, F V, Remnev, G E, Pavlov, S K
Format Journal Article
LanguageEnglish
Published Bristol IOP Publishing 01.01.2014
Subjects
Ablation
Charge carriers
Charge transfer
Current carriers
Deposition
Gallium arsenide
Ion beams
Photoconductivity
Photoelectric effect
Photoelectricity
Physics
Polysilicon
Thin films
Vacuum annealing
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Summary:Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10−2 Pa, 300-1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism and the type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
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ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/552/1/012003