UV–visible reflectivity study of the synthesis and growth of nanocrystals obtained by ion implantation
The reflectivity ( R) in the UV–visible range was used to study CdS nanocrystals obtained by implantation of Cd and S ions into SiO 2 and subsequent annealing ( T a=300–900°C). We demonstrate that such an analysis can give very useful information about the process of nanocrystal formation and growth...
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Published in | Vacuum Vol. 67; no. 3; pp. 451 - 455 |
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Main Authors | , , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Oxford
Elsevier Ltd
26.09.2002
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | The reflectivity (
R) in the UV–visible range was used to study CdS nanocrystals obtained by implantation of Cd and S ions into SiO
2 and subsequent annealing (
T
a=300–900°C). We demonstrate that such an analysis can give very useful information about the process of nanocrystal formation and growth. The synthesis of even a small fraction of CdS is readily observable through the appearance of interference fringes since the refractive index of CdS,
n
CdS, is substantially higher than that of SiO
2,
n
SiO
2
. Extensive CdS synthesis, resulting in strong fringes, occurs for
T
a⩾500°C. In addition, for higher
T
a, a peak in
R with a maximum at 2.45
eV (
R
2.45) becomes discernable indicating the formation of larger nanocrystals. It is shown that the blue shift of
R
2.45 relative to its energy in the bulk CdS closely corresponds to the shift of bandgap,
E
g, with crystallite size and may, therefore, be used to estimate the size of the nanocrystals. |
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ISSN: | 0042-207X 1879-2715 |
DOI: | 10.1016/S0042-207X(02)00230-0 |