Line end shortening in CPL mask technology
Various types of line ends have been evaluated for either straight CPL mask or hybrid type builds. The authors will focus on image line end shortening and the impact of through dose and focus performance for very high NA ArF imaging. Simulations on test structures have been calculated along with in...
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Published in | Microelectronic engineering Vol. 78; pp. 393 - 397 |
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Main Authors | , , , , , , , , , , , , , , , , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.03.2005
Elsevier Science |
Subjects | |
Online Access | Get full text |
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Summary: | Various types of line ends have been evaluated for either straight CPL mask or hybrid type builds. The authors will focus on image line end shortening and the impact of through dose and focus performance for very high NA ArF imaging. Simulations on test structures have been calculated along with in photoresist simulations to predict the impact on process window capability. Test structures have been designed and fabricated into a functional test for evaluation. Process evaluations have been completed and exposure-defocus window calculated. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/j.mee.2004.12.051 |