Line end shortening in CPL mask technology

• Published in: Microelectronic engineering Vol. 78; pp. 393 - 397
• Main Authors: Conley, Will, Kuijten, Jan Pieter, Verhappen, Arjan, van de Goor, Stefan, Litt, Lloyd, Wu, Wei, Lucas, Kevin, Roman, Bernie, Kasprowicz, Bryan, Progler, Chris, Socha, Robert, van den Broeke, Doug, Wampler, Kurt, Laidig, Tom, Hsu, Stephen, Schaefer, Erika, Cook, Pat
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.03.2005; Elsevier Science
• Subjects: Applied sciences; CPL; Electronics; Exact sciences and technology; Imaging; LES; Mask; Microelectronic fabrication (materials and surfaces technology); Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Testing, measurement, noise and reliability; Mask; LES; Imaging; CPL; Capability index; High performance; Functional test; Defocusing; Design for testability; Microelectronic fabrication; Testing equipment; Photolithography; Photoresist
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2004.12.051

Various types of line ends have been evaluated for either straight CPL mask or hybrid type builds. The authors will focus on image line end shortening and the impact of through dose and focus performance for very high NA ArF imaging. Simulations on test structures have been calculated along with in photoresist simulations to predict the impact on process window capability. Test structures have been designed and fabricated into a functional test for evaluation. Process evaluations have been completed and exposure-defocus window calculated.