15-kV/40-A FREEDM Supercascode: A Cost-Effective SiC High-Voltage and High-Frequency Power Switch

High-voltage wide bandgap semiconductor devices such as the 15 kV SiC mosfet have attracted great attention because of their potential applications in high-voltage and high-frequency power converters. However, these devices are not commercially available at the moment, and their high cost due to exp...

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Bibliographic Details
Published inIEEE transactions on industry applications Vol. 53; no. 6; pp. 5715 - 5727
Main Authors Xiaoqing Song, Huang, Alex Q., Sen, Soumik, Liqi Zhang, Pengkun Liu, Xijun Ni
Format Journal Article
LanguageEnglish
Published IEEE 01.11.2017
Subjects
<sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfet
Capacitors
High voltage
JFET
JFETs
Logic gates
MOSFET
SiC
Silicon carbide
supercascade
Switches
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Summary:High-voltage wide bandgap semiconductor devices such as the 15 kV SiC mosfet have attracted great attention because of their potential applications in high-voltage and high-frequency power converters. However, these devices are not commercially available at the moment, and their high cost due to expensive material growth and fabrication may limit their widespread adoption in the future. In this paper, a 15-kV 40-A SiC three-terminal power switch, the Future Renewable Electric Energy Delivery and Management (FREEDM) supercascode, is reported for the first time, which is based on a series connection of 1.2-kV SiC power devices. Compared with the monolithic 15-kV SiC mosfet, the FREEDM supercascode demonstrates obvious advantages in cost and thermal conductivity. The design and voltage-balancing mechanism of the FREEDM supercascode are introduced, and the performance including the voltage balancing, conduction characteristics over a wide range of temperatures, and dynamic switching performance, is analyzed. The FREEDM supercascode's low cost and excellent thermal dissipation capability will facilitate early applications of SiC in very high voltage and high frequency power converters.
ISSN:0093-9994
1939-9367
DOI:10.1109/TIA.2017.2737627