CuGaSe2 solar cells prepared by MOVPE

MOVPE is used to prepare epitaxial reference films and solar cells based on CuGaSe2. RT Hall measurements are performed on epitaxial CuGaSe2. Conductivities up to 0.7 (OHM cm)-1 were obtained. Highest mobilities of 270 cm2/Vs are observed for near stoichiometric slightly Ga-rich films. Net charge ca...

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Published inSolar energy materials and solar cells Vol. 67; no. 1-4; pp. 129 - 136
Main Authors SIEBENTRITT, S, BAUKNECHT, A, GERHARD, A, FIEDELER, U, KAMPSCHULTE, T, SCHULER, S, HARNEIT, W, BREHME, S, ALBERT, J, LUX-STEINER, M. Ch
Format Conference Proceeding Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.03.2001
Subjects
Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
Electrical conductivity
Semiconductor materials
Voltage current curve
Electrical properties
Epitaxy
Charge carrier mobility
Polycrystal
Hall effect
Open circuit voltage
Solar cell
Copper selenides
MOVPE method
Illumination
Manufacturing
Gallium selenides
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Summary:MOVPE is used to prepare epitaxial reference films and solar cells based on CuGaSe2. RT Hall measurements are performed on epitaxial CuGaSe2. Conductivities up to 0.7 (OHM cm)-1 were obtained. Highest mobilities of 270 cm2/Vs are observed for near stoichiometric slightly Ga-rich films. Net charge carrier concentration is higher in the Cu-rich grown films than in the Ga-rich films. Solar cells with epitaxial absorber are prepared that reach efficiencies of 3.3%. First polycrystalline solar cells are grown on Mo/glass at reduced substrate temperatures. Under AM1.5 illumination open-circuit voltages up to 740 mV and efficiencies of 2.0% are obtained. 8 refs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0927-0248
1879-3398
DOI:10.1016/S0927-0248(00)00272-5