A Compact Model of Gate-Voltage-Dependent Quantum Effects in Short-Channel Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

In this paper, we present a compact model of gate-voltage-dependent quantum effects in shortchannel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson’s equation using cylindrical coordinate...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 11; no. 4; pp. 278 - 286
Main Authors Kim, Ji-Hyun, Sun, Woo-Kyung, Park, Seung-Hye, Lim, Hye-In, Shin, Hyung-Soon
Format Journal Article
LanguageEnglish
Published 대한전자공학회 01.12.2011
Subjects
전기공학
MOSFET
Poisson
gate voltage
quantum effect
short channel
surrounding gate
Online AccessGet full text

Cover

More Information
Summary:In this paper, we present a compact model of gate-voltage-dependent quantum effects in shortchannel surrounding-gate (SG) metal-oxide-semiconductor field-effect transistors (MOSFETs). We based the model on a two-dimensional (2-D) analytical solution of Poisson’s equation using cylindrical coordinates. We used the model to investigate the electrostatic potential and current sensitivities of various gate lengths (Lg) and radii (R). Schrödinger’s equation was solved analytically for a one-dimensional (1-D)quantum well to include quantum effects in the model. The model takes into account quantum effects in the inversion region of the SG MOSFET using a triangular well. We show that the new model is in excellent agreement with the device simulation results in all regions of operation. KCI Citation Count: 0
Bibliography:G704-002163.2011.11.4.014
ISSN:1598-1657
2233-4866
DOI:10.5573/JSTS.2011.11.4.278