Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors

• Published in: Journal of semiconductor technology and science Vol. 14; no. 5; pp. 508 - 517
• Main Authors: Kim, Sung Yoon, Seo, Jae Hwa, Yoon, Young Jun, Yoo, Gwan Min, Kim, Young Jae, Eun, Hye Rim, Kang, Hye Su, Kim, Jungjoon, Cho, Seongjae, Lee, Jung-Hee, Kang, In Man
• Format: Journal Article
• Language: English
• Published: 대한전자공학회 01.10.2014
• Subjects: 전기공학; Junctionless; fin-shaped field-effect transistor (FinFET); short-channel effect (SCE); 3-D device simulation
• ISSN: 1598-1657; 2233-4866
• DOI: 10.5573/JSTS.2014.14.5.508

We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulk-type fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width (Wfin) and height (Hfin) of the fin as well as the channel doping concentration (Nch). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET. KCI Citation Count: 10