A novel source/drain on void (SDOV) MOSFET implemented by local co-implantation of hydrogen and helium

• Published in: Microelectronic engineering Vol. 85; no. 7; pp. 1490 - 1494
• Main Authors: Wu, Dake, Huang, Ru, Bu, Weihai, Zhou, Falong, Tian, Yu, Chen, Baoqin, Feng, Chuguang, Chan, Mansun, Wang, Yangyuan
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.07.2008; Elsevier Science
• Subjects: Applied sciences; Design. Technologies. Operation analysis. Testing; Electronics; Exact sciences and technology; H + and He + co-implantation; Integrated circuits; SDOI; SDOV; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Transistors; UTB SOI; H + and He + co-implantation; UTB SOI; SDOI; SDOV; MOSFET; Buried layer; Oxide layer; Thermal behavior; H+ and He+ co-implantation; Short channel; Thin film; Self aligned technology; Silicon on insulator technology; Complementary MOS technology; Self heating; Void; Damaging
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2008.01.079

In this paper a novel device named as SDOV MOSFET is proposed for the first time. This structure features localized void layers under the source and drain regions. The short channel effects of this device can be improved due to the SOI-like source/drain structure. In addition, without the dielectric layer under the channel region, this device can avoid some weaknesses of UTB SOI devices caused by the thin silicon film and the underlying buried oxide, such as mobility degradation, film thickness fluctuation and self-heating effect. Based on self-aligned hydrogen and helium co-implantation technology, the new device can be fabricated by a process compatible with the standard CMOS process. The SDOV MOSFETs with 50 nm gate length are experimentally demonstrated for verification.