Diffusion thermopower of (Ga,Mn)As/GaAs tunnel junctions

We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the density of states in the magnetic material, and th...

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Bibliographic Details
Published inPhysical review letters Vol. 107; no. 19; p. 197201
Main Authors Naydenova, Ts, Dürrenfeld, P, Tavakoli, K, Pégard, N, Ebel, L, Pappert, K, Brunner, K, Gould, C, Molenkamp, L W
Format Journal Article
LanguageEnglish
Published United States 04.11.2011
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Summary:We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the density of states in the magnetic material, and thus has a strongly anisotropic response to the direction of magnetization in the material. The effect will have relevance to the operation of semiconductor spintronic devices, and may indeed already play a role in correctly interpreting the details of some earlier spin injection studies.
ISSN:1079-7114
DOI:10.1103/PhysRevLett.107.197201