Independent magnetization behavior of a ferromagnetic metal-semiconductor hybrid system

We report the discovery of an effect where two ferromagnetic materials, one semiconductor [(Ga,Mn)As] and one metal (Permalloy), can be directly deposited on each other and still switch their magnetization independently. We use this independent magnetization behavior to create various resistance sta...

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Bibliographic Details
Published inPhysical review letters Vol. 103; no. 1; p. 017204
Main Authors Mark, S, Gould, C, Pappert, K, Wenisch, J, Brunner, K, Schmidt, G, Molenkamp, L W
Format Journal Article
LanguageEnglish
Published United States 03.07.2009
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Summary:We report the discovery of an effect where two ferromagnetic materials, one semiconductor [(Ga,Mn)As] and one metal (Permalloy), can be directly deposited on each other and still switch their magnetization independently. We use this independent magnetization behavior to create various resistance states dependent on the magnetization direction of the individual layers. At zero magnetic field a two layer device can reach up to four nonvolatile resistance states.
ISSN:0031-9007
DOI:10.1103/PhysRevLett.103.017204