Nonvolatile resistive switching memory behavior in WOx/BiFeOy heterojunction based memristor
Memristors with a two-terminal structure are considered to be one of the most promising electronic devices capable of overcoming the Von Neumann bottleneck, which is highly anticipated in the post-Moore era and next-generation artificial intelligence applications. In this work, a memristive device w...
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Published in | Journal of alloys and compounds Vol. 939; p. 168761 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
05.04.2023
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Subjects | |
Online Access | Get full text |
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Summary: | Memristors with a two-terminal structure are considered to be one of the most promising electronic devices capable of overcoming the Von Neumann bottleneck, which is highly anticipated in the post-Moore era and next-generation artificial intelligence applications. In this work, a memristive device was fabricated using a WOx/BiFeOy heterojunction as functional layer on F-doped SnO2 (FTO) substrate by magnetron sputtering. The Ag/WOx/BiFeOy/FTO device exhibits enhanced bipolar nonvolatile resistive switching (RS) memory behavior compared with single-layer BiFeOy-based memristors, which can meet the requirements of high-density information storage. By performing a comprehensive conductivity analysis on the current-voltage (I-V) curve, it was proposed a reasonable physical model to explain the RS memory behavior of the device based on space-charge-limited current (SCLC) mechanism and the Schottky emission. Therefore, this work indicates that the bilayer WOx/BiFeOy heterojunction as functional layer can effectively improve the performance of memristive devices, which will further expand the application of ferroelectric/metal oxide heterojunction in the field of memristors.
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•A memristive device was fabricated using a WOx/BiFeOy heterojunction as functional layer.•The Ag/WOx/BiFeOy/FTO device exhibits enhanced bipolar resistive switching behavior.•The bilayer WOx/BiFeOy heterojunction is an advanced functional layer of memristive device.•SCLC assisted Schottky barriers model is proposed to explain the resistive switching effect.•This work expands the application of ferroelectric/metal oxide heterojunctions in memristors. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2023.168761 |