Nonvolatile resistive switching memory behavior in WOx/BiFeOy heterojunction based memristor

Memristors with a two-terminal structure are considered to be one of the most promising electronic devices capable of overcoming the Von Neumann bottleneck, which is highly anticipated in the post-Moore era and next-generation artificial intelligence applications. In this work, a memristive device w...

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Bibliographic Details
Published inJournal of alloys and compounds Vol. 939; p. 168761
Main Authors Wang, Jiangqiu, Sun, Bai, Zhou, Guangdong, Zhu, Shouhui, Yang, Chuan, Ke, Chuan, Zhao, Yong, Wang, Hongyan
Format Journal Article
LanguageEnglish
Published Elsevier B.V 05.04.2023
Subjects
Conductive filament
Ferroelectric materials
Heterojunction
Information processing
Memristive device
Schottky emission
Conductive filament
Ferroelectric materials
Schottky emission
Information processing
Memristive device
Heterojunction
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Summary:Memristors with a two-terminal structure are considered to be one of the most promising electronic devices capable of overcoming the Von Neumann bottleneck, which is highly anticipated in the post-Moore era and next-generation artificial intelligence applications. In this work, a memristive device was fabricated using a WOx/BiFeOy heterojunction as functional layer on F-doped SnO2 (FTO) substrate by magnetron sputtering. The Ag/WOx/BiFeOy/FTO device exhibits enhanced bipolar nonvolatile resistive switching (RS) memory behavior compared with single-layer BiFeOy-based memristors, which can meet the requirements of high-density information storage. By performing a comprehensive conductivity analysis on the current-voltage (I-V) curve, it was proposed a reasonable physical model to explain the RS memory behavior of the device based on space-charge-limited current (SCLC) mechanism and the Schottky emission. Therefore, this work indicates that the bilayer WOx/BiFeOy heterojunction as functional layer can effectively improve the performance of memristive devices, which will further expand the application of ferroelectric/metal oxide heterojunction in the field of memristors. [Display omitted] •A memristive device was fabricated using a WOx/BiFeOy heterojunction as functional layer.•The Ag/WOx/BiFeOy/FTO device exhibits enhanced bipolar resistive switching behavior.•The bilayer WOx/BiFeOy heterojunction is an advanced functional layer of memristive device.•SCLC assisted Schottky barriers model is proposed to explain the resistive switching effect.•This work expands the application of ferroelectric/metal oxide heterojunctions in memristors.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2023.168761