A third generation solar cell based on wet-chemically etched Si nanowires and sol-gel derived Cu2ZnSnS4 thin films

• Published in: Journal of alloys and compounds Vol. 774; pp. 1117 - 1122
• Main Authors: Peksu, Elif, Karaagac, Hakan
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 05.02.2019
• Subjects: CZTS; Photovoltaics; Si nanowires; Thin film; CZTS; Si nanowires; Photovoltaics; Thin film
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2018.10.012

Monophase Cu2ZnSnS4 (CZTS) thin films have been succesfully deposited on both soda lime glass substrate and Si nanowire (NW) arrays by a simple and cost-effective production route based on a combination of sol-gel and spin-coating technique. X-ray diffraction and energy dispersive X-ray analysis studies have revealed that post-annealing process at 350 °C is a sufficient temperature for the growth of a stoichiometric mono-phase CZTS thin film. The band gap energy of the films was found to be 1.55 eV. Following the optimization of CZTS thin films, they were deposited on the Si-NWs as an absorber layer for the fabrication of n-Si-NWs/p-CZTS structured solar cell. From the recorded I-V characteristics of the constructed solar cells under standard condition (A.M 15G), the power conversion efficiency was found to be 1.0 ± 0.1%. •CZTS thin films were successfully deposited on Si nanowires using sol-gel technique.•A prototype of n-Si-NWs/p-CZTS structured solar cell was successfully constructed.•The fabricated solar cell exhibited a 1.0% power conversion efficiency.•A 3-fold higher short-circuit current density was measured compared with its planer counterpart.