Synthesis and characterization of MgO nanocrystals for biosensing applications

• Published in: Journal of alloys and compounds Vol. 632; pp. 639 - 644
• Main Authors: Li, Hongji, Li, Mingji, Qiu, Guojun, Li, Cuiping, Qu, Changqing, Yang, Baohe
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 25.05.2015
• Subjects: Crystal growth; Electrochemical properties; Electron microscopy; Nanostructured materials; Crystal growth; Electrochemical properties; Electron microscopy; Nanostructured materials
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2015.01.294

•MgO nanocrystals were prepared using DC arc plasma jet CVD method.•The growth time does not exceed 10min in process of the synthesis.•The samples were found to consist of cubic MgO nanobelts and nanosheets.•Nanocrystals contain contacts, rough edges, vacancies, and doping defects.•The samples exhibited excellent electrochemical biosensing properties. MgO nanocrystals were prepared using a simple direct current arc plasma jet chemical vapor deposition method. Magnesium nitrate was used as source material and Mo film was used as a substrate and catalyst. The high-temperature plasma produced ensured rapid synthesis of the MgO nanocrystals. The as-prepared nanocrystals were characterized by field-emission scanning electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction, energy-dispersive spectroscopy, Fourier transform infrared spectrometry, ultraviolet–visible spectrophotometry, and photoluminescence measurements. The as-synthesized samples were found to consist of cubic MgO nanobelts and nanosheets with large surface areas and low coordination oxide ions, and contained numerous contacts, rough edges, vacancies, and doping defects. The nanostructures exhibited excellent electrochemical sensing properties with high-sensing sensitivity toward ascorbic acid. Their high electrocatalytic activity was attributed to the effect of defects and the surface electron transfer ability of the one-dimensional MgO nanobelts.