A new drain current model for amorphous IGZO thin film transistors
Based on the conduction mechanisms of amorphous InGaZnO (a-IGZO) thin film transistors, generalized equations are derived which permit the determination of drain current characteristics. A geometry-independent definition for field effect mobility considering the ratio of free-to-trapped carriers is...
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Published in | European physical journal. Applied physics Vol. 70; no. 1; pp. 10101 - 10104 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Les Ulis
EDP Sciences
01.04.2015
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Subjects | |
Online Access | Get full text |
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Summary: | Based on the conduction mechanisms of amorphous InGaZnO (a-IGZO) thin film transistors, generalized equations are derived which permit the determination of drain current characteristics. A geometry-independent definition for field effect mobility considering the ratio of free-to-trapped carriers is introduced, which conveys the properties of the active semiconducting layer. It is suggested that a drain current model that includes different charge transports gives a consistent and accurate description of the electrical behavior. The good agreement between measured and calculated results confirms the efficiency of this model for the design of integrated large-area thin-film circuits. |
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Bibliography: | ark:/67375/80W-CF9M4M9S-Z istex:E514B8CB58F81384068EE66C0F9A60870C48EDC2 publisher-ID:ap150032 PII:S1286004215600325 |
ISSN: | 1286-0042 1286-0050 |
DOI: | 10.1051/epjap/2015150032 |