A new drain current model for amorphous IGZO thin film transistors

• Published in: European physical journal. Applied physics Vol. 70; no. 1; pp. 10101 - 10104
• Main Authors: Qiang, Lei, Yao, Ruo-He
• Format: Journal Article
• Language: English
• Published: Les Ulis EDP Sciences 01.04.2015
• Subjects: Circuit design; Indium gallium zinc oxide; Semiconductor devices; Thin film transistors; Thin films; Transistors
• ISSN: 1286-0042; 1286-0050
• DOI: 10.1051/epjap/2015150032

Based on the conduction mechanisms of amorphous InGaZnO (a-IGZO) thin film transistors, generalized equations are derived which permit the determination of drain current characteristics. A geometry-independent definition for field effect mobility considering the ratio of free-to-trapped carriers is introduced, which conveys the properties of the active semiconducting layer. It is suggested that a drain current model that includes different charge transports gives a consistent and accurate description of the electrical behavior. The good agreement between measured and calculated results confirms the efficiency of this model for the design of integrated large-area thin-film circuits.