Anisotropic Magnetoresistance in Vanishing-Magnetostriction Amorphous Microwires With different Geometries

• Published in: IEEE transactions on magnetics Vol. 46; no. 2; pp. 361 - 364
• Main Authors: Merazzo, Karla J., Badini Confalonieri, Giovanni A., Vazquez, Manuel, Batallan Casas, Francisco
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.02.2010; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Amorphous magnetic materials; Amorphous materials; Amorphous microwires; Anisotropic magnetoresistance; Anisotropy; Curvature; Curved; Geometry; Iron; Magnetic anisotropy; Magnetic domain walls; Magnetic domains; Magnetic fields; Magnetic properties; Magnetism; Magnetization; magnetization processes; Magnetoresistance; Magnetoresistivity; Perpendicular magnetic anisotropy; Quenching; Wire
• ISSN: 0018-9464; 1941-0069
• DOI: 10.1109/TMAG.2009.2033555

Amorphous glass-coated microwires of nominal composition (Co 0.94 Fe 0.06 ) 72.5 Si 12.5 B 15 were prepared by quenching and drawing method, with 20 ¿m and 40 ¿m metallic and total diameter, respectively. Individual pieces of microwires with four different geometry configurations have been studied: a straight wire and three curved wires with approximately 2-mm curvature. Magnetic measurements were performed in a VSM magnetometer under parallel and perpendicular magnetic field modes, while resistance was evaluated with the four-point technique. The magnetoresistance response for each sample has been correlated with the corresponding magnetization processes. The relative contribution of domain wall motion and magnetization rotation mechanisms involved for each geometry configuration and field mode are concluded to be in the origin of the observed magnetic and magnetotransport properties.