A linear array of 980 nm VCSEL and its high temperature operation characteristics
A 980 nm bottom-emitting vertical-cavity surface-emitting laser linear array with high power density and a good beam property of Gaussian far-field distribution is reported. This array is composed of five linearly arranged elements with a 200 μm diameter one at the center, the other two 150μm and 10...
Saved in:
Published in | Journal of semiconductors Vol. 30; no. 11; pp. 59 - 62 |
---|---|
Main Author | |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
01.11.2009
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | A 980 nm bottom-emitting vertical-cavity surface-emitting laser linear array with high power density and a good beam property of Gaussian far-field distribution is reported. This array is composed of five linearly arranged elements with a 200 μm diameter one at the center, the other two 150μm and 100μm diameter ones at both sides of the center with center to center spacing of 300μm and 250μm, respectively. A power of 880 mW at a current of 4 A and a corresponding power density of up to 1 kW/cm^2 is obtained. The temperature dependent characteristics of the linear array are investigated. The thermal interaction between the individual elements of the VCSEL linear array is smaller due to its optimized element size and device spacing, which make it more suitable for high power applications. A peak power of over 20 W has been achieved in pulsed operation with a 60 ns pulse length and a repetition frequency of 1 kHz. |
---|---|
AbstractList | A 980 nm bottom-emitting vertical-cavity surface-emitting laser linear array with high power density and a good beam property of Gaussian far-field distribution is reported. This array is composed of five linearly arranged elements with a 200 μm diameter one at the center, the other two 150μm and 100μm diameter ones at both sides of the center with center to center spacing of 300μm and 250μm, respectively. A power of 880 mW at a current of 4 A and a corresponding power density of up to 1 kW/cm^2 is obtained. The temperature dependent characteristics of the linear array are investigated. The thermal interaction between the individual elements of the VCSEL linear array is smaller due to its optimized element size and device spacing, which make it more suitable for high power applications. A peak power of over 20 W has been achieved in pulsed operation with a 60 ns pulse length and a repetition frequency of 1 kHz. |
Author | 张岩 宁永强 王烨 刘光裕 王贞福 张星 吏晶晶 张立森 王伟 秦莉 孙艳芳 刘云 王立军 |
AuthorAffiliation | Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China Graduate University of the Chinese Academy of Sciences, Beijing 100049, China |
Author_xml | – sequence: 1 fullname: 张岩 宁永强 王烨 刘光裕 王贞福 张星 吏晶晶 张立森 王伟 秦莉 孙艳芳 刘云 王立军 |
BookMark | eNqFUE1rwzAM9aGDdVv_wjC7Z7UtJ7GPpXQfUBhjH1ejOE5r1jqZnR3675euZbsUBgIJvfckPV2QUWiDI-Sas1vOlJryopSZ1KKYAptyPoRkTI3I-Bc4J5OUfMWYVgoGcEyeZ3Tjg8NIMUbc0bahWjEatvR9_rJYUgw19X2ia79a095tOxex_4qOtj-VbwO1a4xoexd96r1NV-SswU1yk2O-JG93i9f5Q7Z8un-cz5aZBab7rGiqXNUl6FxrVsiy1lxYgLyShUbJUTpZg1W6tFJokGXhkFmJQgjbgM0RLklxmGtjm1J0jemi32LcGc7M_h9mb9vsbRsYOtwc_jEIs4PQt92f5iTXdHUz8PkJ_n87bo7Hrduw-vRhZSq0H43fOAMCoFRCwTcvrHzo |
Cites_doi | 10.1109/2944.788412 10.1016/j.optcom.2004.01.020 10.1364/OL.23.000517 10.1109/JQE.1980.1070434 10.1109/3.89952 10.1143/JJAP.40.L33 10.1117/12.460475 10.1049/el:19970193 10.1109/2944.788411 10.1109/68.986783 10.1049/el:20040097 10.1063/1.1596378 |
ContentType | Journal Article |
DBID | 2RA 92L CQIGP W92 ~WA AAYXX CITATION |
DOI | 10.1088/1674-4926/30/11/114008 |
DatabaseName | 维普期刊资源整合服务平台 中文科技期刊数据库-CALIS站点 中文科技期刊数据库-7.0平台 中文科技期刊数据库-工程技术 中文科技期刊数据库- 镜像站点 CrossRef |
DatabaseTitle | CrossRef |
DatabaseTitleList | |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Physics |
DocumentTitleAlternate | A linear array of 980 nm VCSEL and its high temperature operation characteristics |
EndPage | 62 |
ExternalDocumentID | 10_1088_1674_4926_30_11_114008 32337828 |
GroupedDBID | 02O 042 1WK 2B. 2C0 2RA 4.4 5B3 5VR 5VS 7.M 92H 92I 92L 92R 93N AAGCD AAJIO AALHV AATNI ABHWH ACAFW ACGFO ACGFS ACHIP AEFHF AFUIB AFYNE AHSEE AKPSB ALMA_UNASSIGNED_HOLDINGS ASPBG AVWKF AZFZN BBWZM CCEZO CDYEO CEBXE CHBEP CJUJL CQIGP CRLBU CUBFJ CW9 EBS EDWGO EJD EQZZN FA0 IJHAN IOP IZVLO JCGBZ KNG KOT M45 N5L NS0 NT- NT. PJBAE Q02 RIN RNS ROL RPA RW3 SY9 TCJ TGT W28 W92 ~WA UNR -SI -S~ 5XA 5XJ AAYXX ACARI AERVB AGQPQ AOAED ARNYC CAJEI CITATION Q-- TGMPQ U1G U5S |
ID | FETCH-LOGICAL-c309t-6fb58d7395990647d912c335b469a41a4e4d3c897c4293476ea0c4a222cf3c5a3 |
IEDL.DBID | IOP |
ISSN | 1674-4926 |
IngestDate | Tue Jul 01 03:20:24 EDT 2025 Tue Nov 10 14:18:40 EST 2020 Mon May 13 15:54:14 EDT 2019 Thu Nov 24 20:32:31 EST 2022 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 11 |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c309t-6fb58d7395990647d912c335b469a41a4e4d3c897c4293476ea0c4a222cf3c5a3 |
Notes | VCSEL; array; temperature characteristics; high power F424 array high power VCSEL 11-5781/TN temperature characteristics TN248 |
PageCount | 4 |
ParticipantIDs | crossref_primary_10_1088_1674_4926_30_11_114008 iop_primary_10_1088_1674_4926_30_11_114008 chongqing_backfile_32337828 |
ProviderPackageCode | CITATION AAYXX |
PublicationCentury | 2000 |
PublicationDate | 2009-11-01 |
PublicationDateYYYYMMDD | 2009-11-01 |
PublicationDate_xml | – month: 11 year: 2009 text: 2009-11-01 day: 01 |
PublicationDecade | 2000 |
PublicationTitle | Journal of semiconductors |
PublicationTitleAlternate | Chinese Journal of Semiconductors |
PublicationYear | 2009 |
Publisher | IOP Publishing |
Publisher_xml | – name: IOP Publishing |
References | 13 Seurin J F (12) 2008; 6908 1 D'Asaro L A (11) 2005 2 3 4 Arai S (14) 1980; 16 5 6 7 8 9 10 |
References_xml | – start-page: 64 issn: 0731-1230 year: 2005 ident: 11 publication-title: Photonics Spectra – ident: 2 doi: 10.1109/2944.788412 – ident: 10 doi: 10.1016/j.optcom.2004.01.020 – volume: 6908 start-page: 1 year: 2008 ident: 12 – ident: 7 doi: 10.1364/OL.23.000517 – volume: 16 start-page: 197 issn: 0018-9197 year: 1980 ident: 14 publication-title: IEEE J. Quantum Electron doi: 10.1109/JQE.1980.1070434 – ident: 1 doi: 10.1109/3.89952 – ident: 4 doi: 10.1143/JJAP.40.L33 – ident: 5 doi: 10.1117/12.460475 – ident: 3 doi: 10.1049/el:19970193 – ident: 13 doi: 10.1109/2944.788411 – ident: 6 doi: 10.1109/68.986783 – ident: 9 doi: 10.1049/el:20040097 – ident: 8 doi: 10.1063/1.1596378 |
SSID | ssib009883400 ssib004869572 ssj0067441 ssib016971655 ssib022315920 ssib004377404 ssib017478542 |
Score | 1.7635764 |
Snippet | A 980 nm bottom-emitting vertical-cavity surface-emitting laser linear array with high power density and a good beam property of Gaussian far-field... |
SourceID | crossref iop chongqing |
SourceType | Index Database Enrichment Source Publisher |
StartPage | 59 |
SubjectTerms | VCSEL 垂直腔表面发射激光器 热相互作用 线性阵列 线阵 运行特点 高功率密度 高温 |
Title | A linear array of 980 nm VCSEL and its high temperature operation characteristics |
URI | http://lib.cqvip.com/qk/94689X/200911/32337828.html http://iopscience.iop.org/1674-4926/30/11/114008 |
Volume | 30 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwlV07T8MwED5BJSQYeCNKAXlADEhpG9tx4rGqQIB4iofYIsdOoKpISpoO8Os5Jw2iggGkDB7OjnLn-Lvz-T4DHHCPBgk1wpE65g43rnRURPG_otSwyBVCxnYf8vJKnD7w8yfvaQ7qSxAH2Wi68rexWWXyhY-DSCo6rNtxXXx4Vd2L4G-jrbPrm3rpRcnyqsqvLnVJMEZ5vw9jGRVesvT5DXFiBpnm8fXfgOZkBW7rcp3qfMmwPSmitv74yd74529YheWp10l61TRZg7k4XYelb1yE67BQngXV4w247RHre6qcqDxX7yRLiAy6JH0lj_274wuiUkMGxZhYpmNiqa2mvMwkK1toaKJnaaA34eHk-L5_6kxvXnA068rCEUnkBcbm8BCsBPeNdKlmzIswmFbcVTzmhulA-hrhjHFfxKqruUJfQydMe4ptQSPN0ngbiIfxjUtjimbXPDIYjEuT-La3YQa9qya0viyAyK2Hlo8qZJQx9F2CJnRqm4Sjin4jLNPmQRBapYZWqSGzgUxYKbUJR6j1Pwsfzgj_KhSOTLLzn1FbsFjmnMqKxV1oFPkk3kPXpYj2y-n6Cfv82p8 |
linkProvider | IOP Publishing |
linkToPdf | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV3dT9swED9RJiZ4YBsbWgfb_DDxgJQmsZ3UfkTQqnysK9o69c1y7GQgtKS04WH763dO0ooiJjFNyoMf7qzk7uK7s-9-BvjEIyoyamNPmpR73IbS0wnF_4pSy5IwjmXq9iE_D-PBmJ9Noska9Ja9MMW0Wfo7OKyBgmsRNgVxwnd1857DufNZ4IchPmiHwp_arAXPIhZLV9l1-mW0WJCRvLrAcsm3aBT-61wOZ-GqyH_covdY8VctfKd77qf_oi4TmVeoha7q5KZzVyYd8_sBpuN_f9lL2G4CVHJUM72CtTTfga17sIU7sFGVjZr5a7g8Ii5M1TOiZzP9ixQZkSIg-U_y_fhr74Lo3JLrck4cKDJxKFgNhDMpqhHaBDGriNFvYNzvfTseeM0lDZ5hgSy9OEsiYd1xH_q1mHetDKlhLEow79Y81DzllhkhuwY9H-PdONWB4RrDEpMxE2m2C-t5kadvgUSYCoU0pWghhicW83Zps67jtsxiINaGvaVa0MmbGwddpRhlDMMc0QZ_oSg1rZE6VHXCLoRyglVOsIq5nEfVgm3DIWriycQHK8SPEilU1bt_mfUjPB-d9NXF6fB8Dzark6qqz3Ef1svZXfoeA54y-VCZ8x-X3uqS |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=A+linear+array+of+980+nm+VCSEL+and+its+high+temperature+operation+characteristics&rft.jtitle=Journal+of+semiconductors&rft.au=Yan%2C+Zhang&rft.au=Yongqiang%2C+Ning&rft.au=Ye%2C+Wang&rft.au=Guangyu%2C+Liu&rft.date=2009-11-01&rft.issn=1674-4926&rft.volume=30&rft.issue=11&rft.spage=114008&rft_id=info:doi/10.1088%2F1674-4926%2F30%2F11%2F114008&rft.externalDBID=n%2Fa&rft.externalDocID=10_1088_1674_4926_30_11_114008 |
thumbnail_s | http://utb.summon.serialssolutions.com/2.0.0/image/custom?url=http%3A%2F%2Fimage.cqvip.com%2Fvip1000%2Fqk%2F94689X%2F94689X.jpg |