A linear array of 980 nm VCSEL and its high temperature operation characteristics

A 980 nm bottom-emitting vertical-cavity surface-emitting laser linear array with high power density and a good beam property of Gaussian far-field distribution is reported. This array is composed of five linearly arranged elements with a 200 μm diameter one at the center, the other two 150μm and 10...

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Published inJournal of semiconductors Vol. 30; no. 11; pp. 59 - 62
Main Author 张岩 宁永强 王烨 刘光裕 王贞福 张星 吏晶晶 张立森 王伟 秦莉 孙艳芳 刘云 王立军
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Published IOP Publishing 01.11.2009
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Abstract A 980 nm bottom-emitting vertical-cavity surface-emitting laser linear array with high power density and a good beam property of Gaussian far-field distribution is reported. This array is composed of five linearly arranged elements with a 200 μm diameter one at the center, the other two 150μm and 100μm diameter ones at both sides of the center with center to center spacing of 300μm and 250μm, respectively. A power of 880 mW at a current of 4 A and a corresponding power density of up to 1 kW/cm^2 is obtained. The temperature dependent characteristics of the linear array are investigated. The thermal interaction between the individual elements of the VCSEL linear array is smaller due to its optimized element size and device spacing, which make it more suitable for high power applications. A peak power of over 20 W has been achieved in pulsed operation with a 60 ns pulse length and a repetition frequency of 1 kHz.
AbstractList A 980 nm bottom-emitting vertical-cavity surface-emitting laser linear array with high power density and a good beam property of Gaussian far-field distribution is reported. This array is composed of five linearly arranged elements with a 200 μm diameter one at the center, the other two 150μm and 100μm diameter ones at both sides of the center with center to center spacing of 300μm and 250μm, respectively. A power of 880 mW at a current of 4 A and a corresponding power density of up to 1 kW/cm^2 is obtained. The temperature dependent characteristics of the linear array are investigated. The thermal interaction between the individual elements of the VCSEL linear array is smaller due to its optimized element size and device spacing, which make it more suitable for high power applications. A peak power of over 20 W has been achieved in pulsed operation with a 60 ns pulse length and a repetition frequency of 1 kHz.
Author 张岩 宁永强 王烨 刘光裕 王贞福 张星 吏晶晶 张立森 王伟 秦莉 孙艳芳 刘云 王立军
AuthorAffiliation Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
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SubjectTerms VCSEL
垂直腔表面发射激光器
热相互作用
线性阵列
线阵
运行特点
高功率密度
高温
Title A linear array of 980 nm VCSEL and its high temperature operation characteristics
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