A linear array of 980 nm VCSEL and its high temperature operation characteristics

A 980 nm bottom-emitting vertical-cavity surface-emitting laser linear array with high power density and a good beam property of Gaussian far-field distribution is reported. This array is composed of five linearly arranged elements with a 200 μm diameter one at the center, the other two 150μm and 10...

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Bibliographic Details
Published inJournal of semiconductors Vol. 30; no. 11; pp. 59 - 62
Main Author 张岩 宁永强 王烨 刘光裕 王贞福 张星 吏晶晶 张立森 王伟 秦莉 孙艳芳 刘云 王立军
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.11.2009
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Summary:A 980 nm bottom-emitting vertical-cavity surface-emitting laser linear array with high power density and a good beam property of Gaussian far-field distribution is reported. This array is composed of five linearly arranged elements with a 200 μm diameter one at the center, the other two 150μm and 100μm diameter ones at both sides of the center with center to center spacing of 300μm and 250μm, respectively. A power of 880 mW at a current of 4 A and a corresponding power density of up to 1 kW/cm^2 is obtained. The temperature dependent characteristics of the linear array are investigated. The thermal interaction between the individual elements of the VCSEL linear array is smaller due to its optimized element size and device spacing, which make it more suitable for high power applications. A peak power of over 20 W has been achieved in pulsed operation with a 60 ns pulse length and a repetition frequency of 1 kHz.
Bibliography:VCSEL; array; temperature characteristics; high power
F424
array
high power
VCSEL
11-5781/TN
temperature characteristics
TN248
ISSN:1674-4926
DOI:10.1088/1674-4926/30/11/114008