High speed voltage follower for standard BiCMOS technology

A new wideband low-distortion class A unitary gain voltage follower is presented in this brief. Based on a Gilbert's translinear loop of four transistors, the proposed topology only includes high frequency n-p-n transistors in signal paths. The circuit has been simulated under /spl plusmn/1.5 V...

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Bibliographic Details
Published inIEEE transactions on circuits and systems. 2, Analog and digital signal processing Vol. 48; no. 7; pp. 727 - 732
Main Authors Barthelemy, H., Kussener, E.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.07.2001
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Institute of Electrical and Electronics Engineers (IEEE)
Subjects
Bandwidth
BiCMOS integrated circuits
Circuit simulation
Circuit topology
Electronics
Energy consumption
Engineering Sciences
Frequency
Total harmonic distortion
Transfer functions
Voltage
Wideband
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Summary:A new wideband low-distortion class A unitary gain voltage follower is presented in this brief. Based on a Gilbert's translinear loop of four transistors, the proposed topology only includes high frequency n-p-n transistors in signal paths. The circuit has been simulated under /spl plusmn/1.5 V using the 0.8-/spl mu/m BiCMOS technology from AMS. Simulation results confirm low output distortion and high frequency operation performances. For a total power consumption of only 3 mW, the -3-dB bandwidth of the voltage transfer function is higher than 2.5 GHz with a 1-k/spl Omega/ loading resistance. The corresponding total harmonic distortion rate is lower than 0.06% when a 100-mV peak-to-peak input sinusoidal voltage is applied.
ISSN:1057-7130
1558-125X
DOI:10.1109/82.958343