Edge-emitting GaInAs-AlGaAs microlasers

The fabrication and characteristics of edge-emitting microlasers with deeply etched distributed Bragg reflector (DBR) mirrors are presented. Using reactive ion etching, the mirrors are formed at both cavity ends of a ridge waveguide laser with an GaInAs-AlGaAs single-quantum-well active layer. The d...

Full description

Saved in:
Bibliographic Details
Published inIEEE photonics technology letters Vol. 11; no. 8; pp. 943 - 945
Main Authors Hofling, E., Schafer, F., Reithmaier, J.P., Forchel, A.
Format Journal Article
LanguageEnglish
Published IEEE 01.08.1999
Subjects
Bragg reflectors
Chemical lasers
Diffraction gratings
Distributed Bragg reflectors
Dry etching
Holes
Lasing
Microlasers
Mirrors
Monolithic integrated circuits
Optical device fabrication
Optoelectronic devices
Reactive ion etching
Reflectivity
Threshold current
Threshold currents
Waveguide lasers
Online AccessGet full text

Cover

More Information
Summary:The fabrication and characteristics of edge-emitting microlasers with deeply etched distributed Bragg reflector (DBR) mirrors are presented. Using reactive ion etching, the mirrors are formed at both cavity ends of a ridge waveguide laser with an GaInAs-AlGaAs single-quantum-well active layer. The devices have continuous-wave threshold currents as low as 2 and 6 mA at cavity lengths of 80 and 40 μm, respectively. Lasing operation is achieved down to a length of 28 μm. Diffraction limited reflectivities >75% are obtained for third-order gratings, with two DBR periods.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/68.775307