Heteroepitaxial growth of alkali halide solid solution on GaAs(1 0 0)

• Published in: Journal of crystal growth Vol. 237; pp. 244 - 248
• Main Authors: Kiguchi, M., Saiki, K., Koma, A.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.04.2002
• Subjects: A3. Molecular beam epitaxy; B1. Halides; 68.55.−a; B1. Halides; A3. Molecular beam epitaxy; 61.14.Hg; 79.60.Jv
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)01884-X

Heteroepitaxial growth of alkali halide solid solution on GaAs(1 0 0) was studied using reflection high-energy electron diffraction, Auger electron spectroscopy, and electron energy loss spectroscopy. In past studies, a higher substrate temperature has been needed for the epitaxial growth of alkali halides on semiconductor substrates. We could grow a single-crystalline alkali halide thin film on a semiconductor substrate at room temperature, using a solid solution NaCl 0.94Br 0.06 whose lattice constant was equal to that of GaAs. We could modify the lattice constant of a solid solution by changing the mixing ratio, and controlling the conditions of epitaxial growth. This technique is very useful, and it can be applied to many systems, especially for the system where a severe lattice matching condition is required.