Improvement in the properties of CZTSSe thin films by selenizing single-step electrodeposited CZTS thin films

• Published in: Journal of alloys and compounds Vol. 631; pp. 178 - 182
• Main Authors: Gurav, K.V., Shin, S.W., Patil, U.M., Suryawanshi, M.P., Pawar, S.M., Gang, M.G., Vanalakar, S.A., Yun, J.H., Kim, J.H.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.05.2015
• Subjects: Cu2ZnSn(S,Se)4 (CZTSSe) thin films; Cu2ZnSnS4 (CZTS) thin films; Single-step electrodeposition; Thin-film solar cells; Cu2ZnSn(S,Se)4 (CZTSSe) thin films; Thin-film solar cells; Single-step electrodeposition; Cu2ZnSnS4 (CZTS) thin films
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2014.12.253

CZTSSe thin films were deposited by selenization of single step electrodeposited CZTS thin films. The properties of CZTSSe thin films were significantly improved by optimizing Se vaporization temperature. •CZTS precursor thin films are prepared by single step electrodeposition method.•The properties of CZTSSe thin films depend on Se vaporization temperature.•The compact CZTSSe thin films can be used as absorber in thin film solar cells. Cu2ZnSn(SxSe1−x)4 (CZTSSe) thin films are prepared by selenizing a single-step electrodeposited Cu–Zn–Sn–S precursor. The effect of the selenium (Se) vaporization temperature on the properties of CZTSSe thin films is systematically investigated. The position of the (112) peak is systematically shifted to lower 2θ values when the Se vaporization temperature increases. The Raman spectra of CZTSSe films show bimodal behavior. The microstructure and film thickness significantly improve with increasing Se vaporization temperature. The increased Se incorporation in CZTSSe films with the increase of the Se vaporization temperature is demonstrated using a compositional analysis. The band gap energy of CZTSSe thin films is tuned in the range of 1.40–1.08eV by varying the Se vaporization temperature.