SIMS round-robin study of depth profiling of arsenic implants in silicon

• Published in: Applied surface science Vol. 203; pp. 465 - 469
• Main Authors: Tomita, M., Hasegawa, T., Hashimoto, S., Hayashi, S., Homma, Y., Kakehashi, S., Kazama, Y., Koezuka, K., Kuroki, H., Kusama, K., Li, Z., Miwa, S., Miyaki, S., Okamoto, Y., Okuno, K., Saito, S., Sasaki, S., Shichi, H., Shinohara, H., Toujou, F., Ueki, Y., Yamamoto, Y.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.01.2003
• Subjects: Arsenic; Depth profiling; ISO; Round-robin; RSF; SIMS; SIMS; ISO; Arsenic; RSF; Depth profiling; Round-robin
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(02)00702-X

A round-robin study of arsenic depth profiling was conducted by Japanese SIMS users using arsenic-implanted silicon specimens with doses of 3×10 14 to 3×10 16 ions/cm 2. The peak concentration of the implanted arsenic was about 11 at.% for the specimen with the dose of 3×10 16 ions/cm 2. The shape of arsenic ion (AsSi − and As −) profiles was not affected by the incident angle of Cs + primary ion. The RSFs calculated from AsSi −/Si 2 − and As −/Si − by point-by-point normalization were constant against arsenic doses. No dependence of RSFs on the angle of primary ion incidence was observed. Using an AsSi −/Si 2 − or As −/Si − point-by-point calibration method, arsenic with high concentration (11 at.%) in silicon can be quantitatively evaluated without being interfered by its matrix effect.