Design consideration of the thermal and electro stability of multi-finger HBTs based on different device structures

• Published in: Journal of semiconductors Vol. 31; no. 10; pp. 28 - 31
• Main Author: 陈延湖 申华军 刘新宇 徐辉 李玲 李惠军
• Format: Journal Article
• Language: Chinese; English
• Published: IOP Publishing 01.10.2010
• Subjects: 基础; 异质结双极晶体管; 热稳定性; 热阻计算; 电子结构; 等效电路模型; 设备; 设计
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/31/10/104003

The thermal and electro stability of multi-finger heterojunction bipolar transistors （HBTs） with different structures were analyzed and discussed simultaneously. The thermal stability of the devices with different layout structures was assessed by the DC-I V test and thermal resistance calculation. Their electro stability; was assessed by the calculation of the stability factor K based on the S parameter of the HBT. It is found that HBTs with higher thermal stability are prone to lower electro stability. The trade-off relationship between the two types of stability was explained and discussed by using a compact K-factor analytic formula which is derived from the small signal equivalent circuit model of HBT. The electro stability of the device with a thermal ballasting resistor was also discussed, based on the analytic formula.