A "cold" InP-based tunneling injection laser with greatly reduced Auger recombination and temperature dependence

We have measured the Auger recombination rates in an InP-based quantum well tunneling injection laser from large signal modulation experiments. Measured values of the Auger coefficient, C/sub o/=1.2/spl plusmn/0.6/spl times/10/sup -29/ cm/sup 6/ s/sup -1/ at 283 K, are a factor of over 10/sup 2/ sma...

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Published inIEEE photonics technology letters Vol. 7; no. 9; pp. 974 - 976
Main Authors Yoon, H., Gutierrez-Aitken, A.L., Jambunathan, R., Singh, J., Bhattacharya, P.K.
Format Journal Article
LanguageEnglish
Published IEEE 01.09.1995
Subjects
Chemical lasers
Current density
Electron tunneling
Heterojunctions
Laser theory
Light modulation
Metallorganic vapor phase epitaxy
Optical variables measurement
Pulse measurements
Pump lasers
Quantum well devices
Quantum well lasers
Radiative recombination
Semiconducting indium phosphide
Semiconductor quantum wells
Spontaneous emission
Thermal effects
Tunneling
Waveguide lasers
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Summary:We have measured the Auger recombination rates in an InP-based quantum well tunneling injection laser from large signal modulation experiments. Measured values of the Auger coefficient, C/sub o/=1.2/spl plusmn/0.6/spl times/10/sup -29/ cm/sup 6/ s/sup -1/ at 283 K, are a factor of over 10/sup 2/ smaller than those measured in similar multiple quantum well separate confinement heterostructure lasers. In effect, the tunneling injection mechanism keeps the carriers "cold" even at high injection levels. A maximum value of T/sub o/=70 K is measured in the tunneling injection laser compared to 50 K for conventional quantum well structures,.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:1041-1135
1941-0174
DOI:10.1109/68.414673