Monolithic perovskite/silicon tandem solar cells with optimized front zinc doped indium oxides and industrial textured silicon heterojunction solar cells

• Published in: Journal of alloys and compounds Vol. 932; p. 167640
• Main Authors: Zhang, Jiafan, Lu, Linfeng, Zhang, Juan, Li, Sha, Hua, Xiaoming, Zhu, Xiangrong, Ding, Yi-An, Lin, Yinyue, Zhang, Shan-Ting, Li, Dongdong
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.01.2023
• Subjects: Indium zinc oxide; Perovskite/silicon tandem solar cell; Silicon heterojunction solar cell; Silicon heterojunction solar cell; Indium zinc oxide; Perovskite/silicon tandem solar cell
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2022.167640

The power conversion efficiency (PCE) of monolithic perovskite/silicon tandem solar cells has surpassed that of silicon single-junction solar cells recently. Industrial textured crystalline silicon heterojunction solar cells are considered as competitive candidate bottom cells because of their high efficiency and simple process flow. Meanwhile, the front transparent conductive window layers with industrial compatibility and low processing temperature are worth investigating in detail. In this work, zinc-doped indium oxide (IZO) thin films achieved by room-temperature sputtering are studied as a function of sputtering powers. The IZO thin film with the resistivity and electron mobility of 7.2 × 10−4 Ω cm and 40.03 cm2/Vs are obtained under 85 W, which is implemented into the monolithic perovskite/silicon tandem solar cells. A PCE of 19.38% is realized based on the industrial textured silicon heterojunction bottom solar cell and optimized IZO films. •Industrial textured SHJ solar cells was used as the bottom cell of the PSSCs.•Optimal sputtering power of 85 W was obtained for the IZO films with the best FOM.•60 nm IZO facilitates a higher short circuit current and a better current match between the sub-cells.•1 cm2 two-terminal PSSC with PCE of 19.38% were demonstrated without additional anti-reflection layers.