Influence and model of gate oxide breakdown on CMOS inverters

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Bibliographic Details
Published inMicroelectronics and reliability Vol. 43; no. 9; pp. 1439 - 1444
Main Authors Rodrı́guez, R., Stathis, J.H., Linder, B.P., Joshi, R.V., Chuang, C.T.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.09.2003
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ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(03)00247-6