The ratio Oxygen/Zinc effect on photoluminescence emission line at 3.31 eV in ZnO nanowires

We have studied the photoluminescence emission line at 3.31 eV in ZnO nanowires. In undoped ZnO, this band strongly depends on high oxygen concentration and could originate from recombination of bound-exciton complex related to structural defects. Conversely, in doped ones, the photoluminescence emi...

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Bibliographic Details
Published inJournal of applied physics Vol. 119; no. 20
Main Authors Jabri, S., Souissi, H., Lusson, A., Sallet, V., Meftah, A., Galtier, P., Oueslati, M.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 28.05.2016
Subjects
Applied physics
Emission analysis
Nanowires
Photoluminescence
Raman spectra
Zinc oxide
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Summary:We have studied the photoluminescence emission line at 3.31 eV in ZnO nanowires. In undoped ZnO, this band strongly depends on high oxygen concentration and could originate from recombination of bound-exciton complex related to structural defects. Conversely, in doped ones, the photoluminescence emission appears notably at a low VI/II ratio and with the emergence of donor-acceptor pair emission due to the presence of α-No nitrogen complex, which acts as a shallow acceptor in ZnO. We found that this band corresponds to 3LO, the third phonon replica of resonant Raman scattering. Furthermore, a remarkable variation is detected in a number of resonant Raman scattering multiphonons.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.4948702