Spin-valve effects in nickel/silicon/nickel junctions

We report on fabrication and characterization of a planar spin-valve device which has two sets of interdigited nanoscale Ni fingers as two electrodes in Schottky contact with Si. The finger width is 75 nm for one set and 150 nm for the other. A large length-to-width ratio of the fingers results in a...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on magnetics Vol. 32; no. 5; pp. 4707 - 4709
Main Authors Jia, Y.Q., Shi, R.C., Chou, S.Y.
Format Journal Article
LanguageEnglish
Published IEEE 01.09.1996
Subjects
Electrodes
Fabrication
Fingers
Magnetic domains
Magnetization
Magnetostatics
Nanoscale devices
Nickel
Schottky barriers
Silicon
Online AccessGet full text

Cover

More Information
Summary:We report on fabrication and characterization of a planar spin-valve device which has two sets of interdigited nanoscale Ni fingers as two electrodes in Schottky contact with Si. The finger width is 75 nm for one set and 150 nm for the other. A large length-to-width ratio of the fingers results in a single domain magnetization and a sharp magneto-resistance (MR) response. The switching field of the finger is determined by the finger width and spacing due to magnetostatic interaction. MR measurements reveal spin-valve effects in the Ni/Si/Ni junctions with MR changes of 0.3-0.6% at room temperature. The effects are discussed within a spin-valve model.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9464
1941-0069
DOI:10.1109/20.539125