Back-gate bias enhanced band-to-band tunneling leakage in scaled MOSFET's

The drain leakage current in MOSFET's in the present standard process is separated into three distinct components: the subthreshold conduction, the surface band-to-band tunneling (BTBT), and the bulk BTBT. Each of the three shows different dependencies on back-gate bias. As a result, the bulk B...

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Bibliographic Details
Published inIEEE electron device letters Vol. 19; no. 4; pp. 134 - 136
Main Authors Chen, Ming-Jer, Huang, Huan-Tsung, Hou, Chin-Shan, Yang, Kuo-Nan
Format Journal Article
LanguageEnglish
Published IEEE 01.04.1998
Subjects
Boron
CMOS integrated circuits
Current measurement
Doping
Implants
Leakage current
MOSFET circuits
Subthreshold current
Tunneling
Voltage
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Summary:The drain leakage current in MOSFET's in the present standard process is separated into three distinct components: the subthreshold conduction, the surface band-to-band tunneling (BTBT), and the bulk BTBT. Each of the three shows different dependencies on back-gate bias. As a result, the bulk BTBT, increasing exponentially with increasing the magnitude of back-gate reverse bias, promptly dominates the drain leakage. Additional experiment highlights the effect of the increased bulk dopant concentrations as in next-generation scaled MOSFET's on the bulk BTBT. This sets the bulk BTBT a significant constraint to the low-voltage, low-power, high-density CMOS integrated circuits employing the back-gate reverse bias. In this work, the measured drain leakage of interest is successfully reproduced by two-dimensional (2-D) device simulation.
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content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.663538