Extracting MOS parameter variations using dual-drain MOSFET offset

We have developed two offset models for dual-drain MOSFETs-one for surface-channel and one for buried-channel MOSFETs. By fitting the models to offsets measured at selected biases, estimates of various MOS parameter variations can be extracted. The models are originally intended to demonstrate that,...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 44; no. 7; pp. 1084 - 1090
Main Authors Nixon, O., Nathan, A.
Format Journal Article
LanguageEnglish
Published IEEE 01.07.1997
Subjects
Data mining
Doping
Electron mobility
Implants
Magnetic fields
Magnetic sensors
MOSFET circuits
Permittivity
Stress
Threshold voltage
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Summary:We have developed two offset models for dual-drain MOSFETs-one for surface-channel and one for buried-channel MOSFETs. By fitting the models to offsets measured at selected biases, estimates of various MOS parameter variations can be extracted. The models are originally intended to demonstrate that, contrary to current belief, channel implant variations can contribute as much offset to magnetic sensor MOSFETs as mobility variations. The utility of the method, however, extends beyond magnetic sensors. The same approach can be used to extract MOS parameter variations important in circuits such as MOS differential pairs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.595935