An improved NMOS AC hot-carrier lifetime prediction algorithm based on the dominant degradation asymptote

This study presents a new algorithm for improved prediction of AC hot-carrier lifetime. It is based on identifying and projecting the dominant degradation asymptote. The algorithm accounts for the stress-bias dependence of the hot-carrier degradation rate and the nonlinearity of the degradation time...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 44; no. 4; pp. 651 - 658
Main Authors Kim, S.W.A., Menberu, B., Le, H.X.P., Wenjie Jiang, Chung, J.E.
Format Journal Article
LanguageEnglish
Published IEEE 01.04.1997
Subjects
Algorithm design and analysis
Capacitance
Degradation
Hot carriers
Inverters
MOS devices
Parameter extraction
Prediction algorithms
Predictive models
Semiconductor device modeling
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Summary:This study presents a new algorithm for improved prediction of AC hot-carrier lifetime. It is based on identifying and projecting the dominant degradation asymptote. The algorithm accounts for the stress-bias dependence of the hot-carrier degradation rate and the nonlinearity of the degradation time-dependence. Detailed model parameter extraction and lifetime prediction procedures are explained, and applications of the new algorithm demonstrated. Significant differences in the predicted AC lifetimes are found between the existing and the new algorithms over a wide range of CMOS inverter design parameters, such as the input ramp rate and the load capacitance.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.563371