Wide-band polarization-independent tensile-strained InGaAs MQW-SOA gate

• Published in: IEEE photonics technology letters Vol. 10; no. 5; pp. 657 - 659
• Main Authors: Ito, T., Yoshimoto, N., Magari, K., Sugiura, H.
• Format: Journal Article
• Language: English
• Published: IEEE 01.05.1998
• Subjects: Extinction ratio; Gain measurement; Indium gallium arsenide; Optical fiber losses; Optical fiber polarization; Optical polarization; Quantum well devices; Semiconductor optical amplifiers; Tellurium; Wideband
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/68.669233

A high-performance tensile-strained InGaAs multi-quantum-well semiconductor optical amplifier (MQW-SOA) gate developed for wavelength-division-multiplexing (WDM) applications is reported. The -0.47% InGaAs-strained SOA gate has a very low polarization dependence of 0.3 dB over a driving current between 30 and 60 mA and a wide-input signal wavelength range from 1530 to 1580 nm. The fabrication tolerance of the mesa stripe width is very large, ranging from 1.0 to 1.75 μm. The MQW-SOA gate has an extinction ratio of more than 40 dB. The fiber-to-fiber lossless operation current is less than 50 mA over the fiber-amplifier gain band. The gating speed is less than 1 ns.