FMR and magnetization study of NiFe/Ag/CoNi trilayer film

The polycrystalline FeNi/Ag/CoNi asymmetric trilayer films were prepared by UHV magnetron sputtering on silicon. In plane magnetization measurements showed double-step hysteresis loops. Magnetoresistance (MR) measurements revealed a giant magnetoresistance effect with magnitudes in the 0.15-0.29% ra...

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Bibliographic Details
Published inIEEE transactions on magnetics Vol. 34; no. 4; pp. 846 - 848
Main Authors Koymen, A.R., Tagirov, L.R., Gilmutdinov, R.T., Topacli, C., Birlikseven, C., Durusoy, H.Z., Aktas, B.
Format Journal Article
LanguageEnglish
Published IEEE 01.07.1998
Subjects
Couplings
Geometry
Giant magnetoresistance
Magnetic hysteresis
Magnetic resonance
Saturation magnetization
Semiconductor films
Silicon
Sputtering
Temperature distribution
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Summary:The polycrystalline FeNi/Ag/CoNi asymmetric trilayer films were prepared by UHV magnetron sputtering on silicon. In plane magnetization measurements showed double-step hysteresis loops. Magnetoresistance (MR) measurements revealed a giant magnetoresistance effect with magnitudes in the 0.15-0.29% range at room temperature. The saturation magnetizations and the interaction between layers were studied by ferromagnetic resonance and revealed an undistinguishably weak interlayer coupling from out-of-plane geometry of measurements. The MR data are interpreted based on the incomplete domain alignment model for polycrystalline magnetic films.
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content type line 23
ISSN:0018-9464
1941-0069
DOI:10.1109/20.706282