A highly miniaturized front-end HIC for 1.9 GHz bands

A miniaturized receiver front-end hybrid IC (HIC) using MBB (microbump bonding) technology has been demonstrated. A GaAs IC die was dip-chip bonded on a ceramic substrate with matching circuits on its surface. New technologies such as 0.5 /spl mu/m gate buried p-layer MESFETs, on-chip high-dielectri...

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Bibliographic Details
Published inIEEE journal of solid-state circuits Vol. 33; no. 9; pp. 1284 - 1289
Main Authors Nakatsuka, T., Itoh, J., Yoshida, T., Nishitsuji, M., Uda, T., Ishikawa, O.
Format Journal Article
LanguageEnglish
Published IEEE 01.09.1998
Subjects
Bonding
Capacitors
Ceramics
Dielectric substrates
Gain
Gallium arsenide
Hybrid integrated circuits
Image converters
MESFETs
RLC circuits
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Summary:A miniaturized receiver front-end hybrid IC (HIC) using MBB (microbump bonding) technology has been demonstrated. A GaAs IC die was dip-chip bonded on a ceramic substrate with matching circuits on its surface. New technologies such as 0.5 /spl mu/m gate buried p-layer MESFETs, on-chip high-dielectric constant capacitors, and intermediate tuned circuits have enabled miniaturization and low power-consumption at the same time. The fabricated HIC measured only 3.5/spl times/4.0/spl times/1.0 mm which corresponded to a 64% reduction from the conventional one. Conversion gain of 16.0 dB, IP3 out of 0 dBm, noise figure of 5.1 dB, and image rejection ratio over 20 dBc were obtained for the new HIC at 1.9 GHz, 3.0 V, and 4.5 mA of power supply.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:0018-9200
1558-173X
DOI:10.1109/4.711325