Modeling and characterization of deeply etched multilayer resonators under partial coherent excitation via multimode optical fibers

• Published in: Journal of optics (2010) Vol. 26; no. 6; pp. 65801 - 65809
• Main Authors: A Selim, Mahmoud, Sabry, Yasser M, Marty, Frédéric, Bourouina, Tarik, Khalil, Diaa
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.06.2024
• Subjects: Bragg grating; DRIE; microresonators; multilayer structures; multimode fiber; silicon photonics
• ISSN: 2040-8978; 2040-8986
• DOI: 10.1088/2040-8986/ad3bcb

Abstract Recently, there has been a resurgence of interest in multimode optical fibers illuminated by a white light source. Largely, in anticipation of many integrated applications in the biomedical domain and spectral sensing benefiting from the broad spectral range and high numerical aperture (NA). Along these lines, the output light from these fibers can be captured by the physics of partially coherent sources. While the Gaussian Schell model has provided a framework for studying partial coherence, to our knowledge, its impact on microstructures remains unexplored. As the sheer complexity arising from the interplay between partial coherence and microstructures transfer function has posed fundamental challenges in deciphering their response. In this work, we introduce a comprehensive numerical model paired with experimental validation to assess the performance of multilayer optical resonators, which are meticulously crafted through high aspect ratio silicon etching under the influence of a partially coherent optical source. The model studies the effects of optical fiber NA, Bragg mirror order, cavity length, and surface roughness of the microstructures on the output of the resonator. The results show that the response under standard multimode fiber (MMF, partial coherent source) has lower insertion loss, more asymmetry versus wavelength, and larger full width at half maximum than the standard single mode fiber (full coherent source). A silicon-on-insulator chip is fabricated using 130 µ m deep etching of silicon for Bragg mirrors with 2.25, 3, and 3.25 µ m silicon layer widths and a different number of layers. The structures are characterized using a MMF of 62.5 µ m core diameter illuminated by an infrared white light source. The theoretical results have been compared with the experimental results and a good agreement has been obtained.